Semiconductor Manufacturing Process

The manufacturing process of silicon wafers mainly consists of the crystal growth process and the wafer processing process.

process

01

Polycrystalline Silicon
(Nugget)

process

02

Single Crystal Pulling
(CZ Method)

In the CZ method, a heater, graphite crucible, quartz crucible, and polycrystalline silicon are set in a pulling device, and are heated and melted under reduced pressure in an inert atmosphere. A single crystal is grown by attaching a seed crystal and gradually pulling it up.

process

03

Single Crystal Silicon Ingot

The single crystal silicon ingot for a wafer with a diameter of 300mm can reach a length of 2m and a weight exceeding 300kg, making it a very large object.

process

04

Peripheral Grinding

The outer circumference of the single crystal silicon ingot is ground to achieve the specified diameter. A groove (notch) or plane (orientation flat: Ori-Flat) indicating the crystal orientation is made on part of the circumference. After that, it is cut to the specified length before slicing.

process

05

Slicing Process

The ingot is cut into a wafer shape using a wire saw method or an inner diameter blade method.

process

06

Bevel Processing
(Edge Chamfering)

To prevent chipping and cracking during the wafer manufacturing process, the edge of the wafer is ground into an arc shape using a diamond grindstone, chamfering the surface.

process

07

Lapping Process
(Double-Sided Mechanical Polishing)

The carrier with the wafer is rotated between the rotating upper and lower lapping plates, and both sides are polished by supplying abrasive grains.

process

08

Etching
(Double-Sided Chemical Polishing)

The fixture with the wafer is rotated in the etching solution mixed with acid, etching it, and completely removing the damage layer caused by the mechanical processing in the previous step.

process

09

Donor Removal Heat Treatment

Heat treatment is carried out using a diffusion furnace, decomposing unstable donors (n-type impurities) originating from oxygen generated during crystal growth, and returning it to its original resistivity.

process

10

Polishing
(Single-Sided Mirror Polishing)

A plate with the wafer attached is pressed against a rotating platen with a polishing cloth attached, and the polishing is continued until it becomes a mirror surface while supplying a polishing material, by mechanical and chemical combined action.

process

11

Cleaning

The wafer is cleaned with chemicals and ultra-pure water, achieving chemical and physical purification.

process

12

Inspection

A high-intensity spotlight is shone on the surface of the wafer for visual inspection, and flatness, resistivity, and the number of microscopic particles adhered to the surface are also inspected using a dedicated inspection device.

process

13

Packing

The wafer is placed in a clean shipping case and then sealed in a special bag that does not allow moisture and other elements to pass through.

process

14

Shipping

Wafers are shipped in shock-absorbing boxes designed for shipping to ensure they don't break from minor impacts.