Products

Single Type Wafer Cleaner PWS2501

This device is a single wafer cleaning device compatible with Ø150mm (6") and Ø200mm (8").
The wafers are set by the operator on the LD side in a cassette that holds 25 pieces. After cleaning, the wafers are stored in a clean cassette set on the ULD side.

Download the Brochure Contact Us

Specifications
Example for SiC Wafers

LD/ULD
Underwater LD/Airborne ULD
Particle Scattering Prevention by Underwater Storage LD
Brush Cleaning
Double-sided Brush Scrub Cleaning
A structure that sprays water from the inside of the roll axis to the outside of the brush to eliminate dirt.
Ozone Cleaning Section
Max 5L/min
Strong oxidizing property of ozone concentration over 30 ppm.
Physical Cleaning
Frequency 430kHz
Stable cleaning with low damage and high cleanliness.
Spin Drying
Max 4000rpm
Efficiency improvement by high-speed drying
Number of Chambers
4 or 5 (customizable)
Dedicated for each process, preventing the mixture of chemicals.
Robots
2 units
Differentiating the use of transport robots before and after cleaning.

Example for SiC Wafers

Basic Method of SiC Wafer Cleaning
SiC wafers are chemically stable substrates, and it is difficult to achieve their cleaning effect with the same method as Si wafers.
However, it is believed that by forming an oxide film on the Si surface, chemical cleaning becomes possible, and a cleaning effect can be achieved.
The method involves forcibly forming an SiO2 film on the Si surface using O3 water, and removing the SiO2 film with HF.
Cleaning Process and Device Configuration
LD (Underwater) → Double-sided Brush Scrub → Ozone Water → HF Cleaning → Ultrasonic Shower Cleaning → Spin Drying → ULD (In Air)
Throughput
Takt Time: 45 seconds/piece for Ø150mm (6")
Takt Time: 60 seconds/piece for Ø200mm (8")
※ The takt time is just a guideline. It varies depending on the cleaning recipe.